ROHM presents high-performance SiC and GaN solutions, eco-friendly power modules, and key partner applications at PCIM Europe 2025, held from May 6–8 in Nuremberg, Germany.

Contributing to Automotive Technological Innovation through the Social Implementation of GaN Power Semiconductors.

The low-capacitance design prevents signal degradation, while high surge current rating provides enhanced protection for automotive electronic devices.

ROHM has announced the adoption of its PMICs in power reference designs focused on the next-generation cockpit SoCs Dolphin3 and Dolphin5 by Telechips.

Contributes to higher efficiency in automotive electric compressors and inverters for industrial equipment.

AEC-Q101 qualified designs contribute to greater miniaturization and high-efficiency operation.

ROHM and United Automotive Electronic Systems Co., Ltd., (UAES), a leading Tier 1 automotive supplier in China, have recently entered into a long-term supply agreement for SiC power devices.

Low temperature dependence together with wide angle emission and uniform light output contribute to the evolution of automotive driving assistance technologies.

ROHM and Toshiba are set to collaborate on power device manufacturing, with the Ministry of Economy, Trade and Industry supporting this move to ensure a secure and stable semiconductor supply.

ROHM has developed Hall ICs, the BD5310xG-CZ / BD5410xG-CZ series, designed for automotive applications requiring magnetic detection.