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UnitedSiC's UF3SC SiC FETs Deliver Increased Efficiency for EV Inverters

Mouser Electronics, Inc., the industry's leading New Product Introduction (NPI) distributor with the widest selection of semiconductors and electronic components, is now stocking UF3SC silicon carbide (SiC) FETs from UnitedSiC.

UnitedSiC's UF3SC SiC FETs Deliver Increased Efficiency for EV Inverters

UnitedSiC UF3SC SiC FETs are based on a unique cascode circuit configuration that employs a normally on SiC JFET that is co-packaged with a silicon MOSFET to produce a normally off SiC FET device. The UF3SC FETs feature standard gate-drive characteristics that allow a true drop-in replacement to silicon IGBTs and FETs, SiC MOSFETs, or silicon super-junction devices.

The UF3SC SiC FETs offer low intrinsic capacitance, ultra-low gate charge, and excellent reverse recovery. The FETs offer maximum operating temperatures up to 175 degrees Celsius and are ideal for use in electric vehicle (EV) charging, photovoltaic (PV) inverters, motor drives, switch-mode power supplies, power factor correction modules, and induction heating.

The UnitedSiC UF3SC SiC FETs are available in TO-247-3L packaging for faster switching and clean gate waveforms, or a low-profile DFN 8x8 surface-mount package that enables ultra-low RDS(ON).

With its broad product line and unsurpassed customer service, Mouser strives to empower innovation among design engineers and buyers by delivering advanced technologies. Mouser stocks the world's widest selection of the latest semiconductors and electronic components for the newest design projects. Mouser Electronics' website is continually updated and offers advanced search methods to help customers quickly locate inventory. also houses data sheets, supplier-specific reference designs, application notes, technical design information, and engineering tools.

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